PART |
Description |
Maker |
MGP20N14CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
ON Semiconductor
|
MGP20N35CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
ON Semiconductor
|
MGP20N40CL_D ON1864 MGP20N40CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT From old datasheet system 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
MLD2N06CLT4 MLD2N06CLT4G MLD2N06CL MLD2N06CLG |
SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK SMARTDISCRETES MOSFET 2 Amp, 62 Volts, Logic Level N Channel DPAK(智能MOSFET)
|
http:// ONSEMI[ON Semiconductor]
|
Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A) Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲) Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲)
|
TECCOR[Teccor Electronics] Littelfuse, Inc. TE Connectivity, Ltd.
|
BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS) 600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET 12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|